Laterally proximized aluminum tunnel junctions
نویسندگان
چکیده
منابع مشابه
Magnetic Tunnel Junctions
Application of Bardeen’s tunneling theory to magnetic tunnel junctions having a general degree of atomic disorder reveals the close relationship between magneto-conduction and voltage-driven pseudo-torque, as well as the thickness dependence of tunnel-polarization factors. Among the results: 1) The torque generally varies as sin θ at constant applied voltage. 2) Whenever polarization factors ar...
متن کاملMagnetic Tunnel Junctions
Figure 1 Schematic illustration showing the mechanism of TMR. Top: for parallel aligned magnetization as sketched at left, electrons around the Fermi level with spin up (m) and spin down (k) are allowed to tunnel from majority to majority bands, and from minority to minority bands. Bottom: when the magnetization is antiparallel, tunneling takes place from majority to minority and minority to ma...
متن کاملSuperelliptic Josephson Tunnel Junctions
The most important practical characteristic of a Josephson junction is its critical current. The shape of the junction determines the specific form of the magnetic-field dependence of the its Josephson current. Here we address the magnetic diffraction patterns of specially shaped planar Josephson tunnel junctions. We focus on a wide ensemble of generalized ellipses, called superellipses, which ...
متن کاملBallistic electron microscopy study of ultrathin oxidized aluminum barriers for magnetic tunnel junctions
Ballistic electron emission microscopy has been used to study thin aluminum oxide tunnel junction barriers formed both by magnetron sputter deposition and thermal evaporation. We have found that the barriers made by oxidation of evaporated Al become fully formed at a significantly thinner mean deposited thickness ~;6 Å! than junctions made by sputter deposition. The effective barrier height of ...
متن کاملUltrathin aluminum oxide tunnel barriers.
Ballistic electron emission microscopy is used to study the formation of ultrathin tunnel barriers by the oxidization of aluminum. An O2 exposure, approximately 30 mTorr sec, forms a uniform tunnel barrier with a barrier height straight phi(b) of 1.2 eV. Greater O2 exposure does not alter straight phi(b) or the ballistic transmissivity of the oxide conduction band. Tunneling spectroscopy indica...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 2011
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.3590922